IMZ120R060M1HXKSA1
IMZ120R060M1HXKSA1
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- Configuration
- N-CH
- V(DS)
- 1200 V
- I(D)at Tc=25°C
- 36 A
- RDS(on)at 10V
- 60 mOhm
- Q(g)
- 31 nC
- P(tot)
- 150 W
- R(thJC)
- 0.8 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- SiC
- Fast bodydiode
- YES
- Automotive
- NO
- Gehäuse
- TO247-4
- RoHS Status
- RoHS-conform
- Verpackung
- TUBE
- Hersteller Artikel
- SP001808370
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- A
- Lieferzeit beim Hersteller
- 16 Wochen
CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package
The CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Summary of Features
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- Driver source pin for optimized switching performance
Benefits
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
Potential Applications
- Solutions for solar energy systems
- EV-Charging
- Uninterruptible power supply (UPS)
- Power Supplies
- Motor Control and Drives
