AIKW50N65RF5XKSA1
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- V(CE)
- 650 V
- I(C)
- 50 A
- V(CEsat)
- 1.6 V
- Gehäuse
- TO-247
- Bodydiode
- YES
- P(tot)
- 250 W
- Automotive
- AEC-Q(101)
- t(r)
- 13 nS
- td(off)
- 156 nS
- td(on)
- 20 nS
- Befestigung
- THT
- RoHS Status
- RoHS-conform
- Technologie
- TRENCH
- Verpackung
- TUBE
- Hersteller Artikel
- SP001724852
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- A
- Lieferzeit beim Hersteller
- 28 Wochen
Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications
Best cost-performance is the most important aspect
for auxiliary applications in electric vehicles and hybrid vehicles.
Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO
fast-switching IGBT and CoolSiC™ Schottky Diode to enable a
cost-efficient performance boost for fast switching automotive
applications such as On-Board Charger, PFC, DC-DC and DC-AC.
The
combination of a best-in-class fast-switching IGBT with a very reliable
SiC Diode builds a perfect cost-performance trade-off for hard-switching
topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the
Eon of the IGBT will be reduced significantly over silicon-only
solutions. This makes the hybrid the first-choice for
system-cost-sensitive hard commutation applications, such as Totem Pole
topology in Automotive On-Board Charger applications. This results in
better margin for low-complexity design-in activities.
Summary of Features
- 650V TRENCHSTOP™ 5 IGBT + CoolSiC™ Schottky Diode Gen5
- Best-in-class switching and conduction losses
- No reverse & forward recovery charge
- High operating temp: Tj,max = 175°C
- Robust against surge currents
- Low gate charge Qg Available from 15A up to 50A
Benefits
- Highest reliability against environmental conditions
- Increased system efficiency
- Best performance/cost ratio for hard switching topologies (e.g. Totem Pole)
- Supporting bi-directional On-Board Charger designs
Potential Applications
• On-Board Charger
• PFC
• DC-DC
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