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  1. Startseite
  2. Semiconductors
  3. Analog/Mixed Signal
  4. Gate Driver Ics
  5. INFINEON Gate Driver Ics

2ED24427N01FXUMA1

INFINEON
Description: LS-GATE-DRIVER 24V 10A DSO-8 Hersteller: INFINEON Matchcode: 2ED24427N01F Rutronik No.: ICGDRV1371 VPE: 1 MOQ: 1 Package: DSO-8 Verpackung: REEL
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Kanäle
2
I(lim,min)/Ch
10 A
Befestigung
SMD
Diagnostik
NO
T(j,max)
150 °C
I(lim,max)/Ch
-10 A
V(in,min)
12.5 V
V(in,max)
24 V
t(on)
0.04 µS
t(off)
0.055 µS
OL Detection
NO
Automotive
NO
Gehäuse
DSO-8
RoHS Status
RoHS-conform
Verpackung
REEL
Hersteller Artikel
SP005349592
ECCN
EAR99
Zolltarifnummer
85423990000
Land
China
ABC-Schlüssel
A
Lieferzeit beim Hersteller
100 Wochen

24 V dual-channel low-side gate driver with high current for driving large power switches

EiceDRIVER™ 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with thermally efficient, exposed power pad. 2ED24427N01F enables higher power and faster switching frequencies in multiple applications with a reduced PCB footprint and increased reliability by simplifying high power density system design.

The 2ED24427N01F is a low-voltage, power MOSFET and IGBT non-inverting gate driver. Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output driver features a current buffer stage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays between two channels are matched. Internal VCC circuitry provides under voltage lockout protection that holds output low until VCC supply voltage is within operating range.

Summary of Features

  • 10 A sink and 10 A source driver capability (typical)
  • 11.5 V under voltage lockout
  • 24 V maximum supply voltage
  • Enable function
  • CMOS Schmitt-triggered inputs
  • Output in phase with input
  • 3.3 V, 5 V and 15 V input logic compatible
  • PSOIC-8 package with thermal pad
  • 2 kV HBM ESD

Benefits

  • Large driving capability for high power or paralleled MOSFETs and IGBTs or modules such as EasyPACK™ or EconoPACK™
  • Thermally efficient PDSO-8 package increased reliability and overall full load system efficiency
  • System cost reduction possible by paralleling more than one switch per channel (e.g. in synchronous rectification)
  • System cost and size reduction possible by reducing the number of lower current (e.g. 5 A) low-side gate drivers needed in various power electronic paralleling applications
Applications
  • Fast EV charging
  • Industrial motor drives and controls
  • Power Management (SMPS) - Reference Design

Anfragen oder bestellen:

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Letzte Bestellmöglichkeit beim Hersteller: 31.05.2024
4,11 $
4,11 $

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